Temperature sensor circuit for relative thermal sensing

ABSTRACT

An example device includes a first temperature sensor configured to provide a first current signal indicative of a temperature of a first circuit based on a voltage of a first temperature sensing element. The first circuit includes a power switch device and the first temperature sensing element. A second temperature sensor is configured to provide a second current signal indicative of temperature of a second circuit based on a voltage of a second temperature sensing element. The second circuit includes the second temperature sensing element. A trim circuit is configured to trim current in at least one of the first temperature sensor or the second temperature sensor to compensate for mismatch between temperature coefficients of the first and second temperature sensing elements.

CROSS-REFERENCE TO RELATED APPLICATION

This division application claims the benefit of priority to U.S. patentapplication Ser. No. 16/395,860, filed Apr. 26, 2019, which applicationclaims the benefit of priority from U.S. Provisional Application No.62/703,245, filed Jul. 25, 2018, both of which are incorporated hereinby reference in their entirety.

TECHNICAL FIELD

This disclosure relates to temperature sensor circuitry for relativethermal sensing.

BACKGROUND

Switch devices, such as power metal oxide field effect transistors(MOSFETs), are used for a wide range of applications. In automotive andother applications, the switch devices are subjected to a wide range ofvoltage supplies and even a wider range of transient electricaldisturbances, such as may occur when disconnecting inductive loads,sudden power cutoffs, switch bouncing or the like.

As one example, a safe operating area (SOA) limit of a power switchdevice (e.g., MOSFET) tends to vary significantly depending on itsjunction temperature. During circumstances of high in-rush current,limiting peak power in power switch device cannot provide adequateprotection for many load driving applications because the load cannot beenergized high enough if the switch is prematurely turned off during thehigh in-rush current condition.

SUMMARY

This disclosure relates to temperature sensor circuitry for relativethermal sensing, such as may be used for shutdown of a power switch.

In one example, a device includes a first temperature sensor configuredto provide a first current signal indicative of a temperature of a firstcircuit based on a voltage of a first temperature sensing element. Thefirst circuit includes a power switch device and the first temperaturesensing element. A second temperature sensor is configured to provide asecond current signal indicative of temperature of a second circuitbased on a voltage of a second temperature sensing element. The secondcircuit includes the second temperature sensing element. A trim circuitis configured to trim current in at least one of the first temperaturesensor or the second temperature sensor to compensate for mismatchbetween temperature coefficients of the first and second temperaturesensing elements.

In another example, a circuit includes a level shifter including aninput adapted to be coupled to a diode and including a level shifteroutput. A voltage-to-current converter includes an input coupled to thelevel shifter output and a sensor current output. An offset trim circuitincludes an offset current output. A proportional to absolutetemperature (PTAT) current generator includes a first PTAT input coupledto the sensor current output and a second PTAT input coupled to theoffset current output. The PTAT current generator also includes a PTAToutput. A gain trim circuit includes an input coupled to the PTAT outputand including a sensor output.

In yet another example, a system includes a first circuit and a secondcircuit. The first circuit includes a power switch device and a firstsensing element configured to provide a first voltage that varies basedon a temperature of the power switch device. The second circuit includesa second sensing element configured to provide a second voltage thatvaries based on a temperature of a substrate of the second circuit. Afirst temperature sensor is configured to convert the first voltage to afirst current signal indicative of a temperature of the first circuit. Asecond temperature sensor is configured to convert the second voltage toa second current signal indicative of a temperature of the secondcircuit. A trim circuit is configured to apply at least one of an offsettrim or gain trim to adjust current in at least one of the firsttemperature sensor or the second temperature sensor to compensate formismatch between temperature coefficients of the first and secondsensing elements.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts an example of a system to perform temperature sensing forcontrolling shutdown of a power switch device.

FIG. 2 depicts an example of a device to perform temperature sensingimplemented in a multi-die module package.

FIG. 3 depicts an example of a temperature sensor circuit.

FIG. 4 are plots of signals showing the effects of processing by variousstages of the temperature sensor circuit of FIG. 3 .

FIG. 5 are plots of voltage and current as a function of temperature.

FIG. 6 depicts an example of a thermal sensing and shutdown system thatincludes a plurality of power switch devices and associated thermalsensors.

DETAILED DESCRIPTION

This disclosure relates to thermal sensing (e.g., monitoring) ofassociated circuitry, such as may include power switch devices (e.g.,metal oxide semiconductor field effect transistors (MOSFETs), bipolarjunction transistors (BJTs), insulated gate bipolar transistors(IGBTs)).

By way of example, the thermal sensing of the associated circuitry maybe used to control shutdown of one or more power switch devicesimplemented on such associated circuitry. The thermal sensing andshutdown can be utilized to help ensure that power switch devicesoperate within defined safe operating area (SOA) of the devices, whichare usually described in the datasheets for such devices. The SOA for agiven device may change depending on its junction temperature. Invarious applications, limiting the peak power in the power switch device(e.g., metal oxide semiconductor field effect transistor (MOSFET)) maynot provide an adequate cost-effective solution for driving certaintypes of loads. For example, if the load condition changes over time,device SOA limit may be over-designed if max peak power is onlyconsidered. On the other hand, if the switch device is turned offprematurely by utilizing medium or low peak power to determine deviceSOA during high in-rush current conditions, the load may not beenergized sufficiently. Accordingly, this disclosure provides anapproach (e.g., circuitry, devices and systems) to sense temperature ofthe power switch device that can be utilized to limit energyaccumulation during high in-rush current conditions. Advantageously, theapproach disclosed herein can be implemented as a low-cost solution witha reduced on-die area compared to many existing designs.

As an example, a device includes a first temperature sensor configuredto provide a first current signal indicative of a temperature of a firstcircuit based on a voltage signal from a sensing element (e.g., athermal diode) that is part of the first circuit. For example, thesensing element is configured to provide the voltage signal to representa temperature of a power switch device (e.g., a power MOSFET). The firstcircuit may be implemented as an integrated circuit (IC) die (e.g., aFET die) that includes a power switch device and the sensing elementfabricated on a common semiconductor substrate of the IC die. In thisway the voltage from the temperature sensing element represents thetemperature of the switch device. In an example, the first temperaturesensor can reside in a separate circuit, such as another IC die (e.g., acontroller die) that includes temperature sensing and other circuitryconfigured to perform related control functions, such as includingcontrolling thermal shutdown of the power switch device.

As a further example, the controller die includes a second temperaturesensor that is configured to provide another current signal indicativeof a temperature of a second circuit based on another voltage signal.For example, a second sensing element (e.g., thermal diode) isconfigured to sense the temperature of the second circuit, whichcorresponds to an ambient temperature of the second circuit (e.g., thecontroller die) outside of the switch device (e.g., power FET). Trimcircuitry is configured to trim the current in one or more of thetemperature sensors to compensate for mismatch between temperaturecoefficients of the first and second temperature sensing element (e.g.,diodes) such as may result from implementing thermal diodes on differentIC dies. As an example, the trim circuitry can be configured to applygain trim and/or offset trim to each of the first and second temperaturesensors.

The device can also include shutdown circuitry that includes acomparator configured to compare the first and second current signalsand to trigger a shutdown of the power switch device based on a relativetemperature (e.g., as represented by a difference between the first andsecond current signals) exceeding a threshold. By implementing the trimcircuitry to compensate for temperature coefficient mismatch oftemperature sensing elements, the shutdown control can apply asubstantially constant threshold across expected operating temperatures.Additionally, by implementing the temperature sensors as current modesensors (e.g., instead of voltage load sensors) a reduced number ofcircuit components may be utilized, such as by implementing currentmirror structures to evaluate signals, which results in a reducedfabrication cost. The current mode operation also enables efficientlyextending the devices and circuits disclosed herein to sensingtemperature and thermal shutdown for multichannel devices that includemultiple power switch devices (e.g., FET IC dies). Because the currentmode operation can reduce the number of components, resulting in fewercomponents connected in series between the supply and ground, thecircuits and devices here may exhibit a wider operating range under lowpower supply conditions.

As used herein, a device or component that is “configured to” perform atask or function may be configured (e.g., programmed and/or hardwired)at a time of manufacturing by a manufacturer to perform the task orfunction and/or may be configurable (or re-configurable) by a user aftermanufacturing to perform the function and/or other additional oralternative functions. The configuring may be through firmware and/orsoftware programming of the device, through a construction and/or layoutof one or more physical hardware components and/or interconnections ofthe device, or a combination thereof.

FIG. 1 depicts an example of a temperature sensing device 100. Thetemperature sensing device 100 is configured to detect a relativetemperature between different circuits. For example, a first circuit 101includes a power switch device 102 and a temperature sensing element104. The circuit 101 containing the power switch device 102 and thetemperature sensing element 104 may be implemented as an IC die. Forexample, the temperature sensing element 104 is a thermal diodeconfigured to provide a diode voltage that varies based on a temperatureof a substrate (e.g., at a PN junction of the diode) in which the diodeis implemented. In other examples, the temperature sensing element 104may comprise different circuitry, such as a scaled current circuit or atemperature dependent resistor circuit. For sake of consistency, in theexample embodiments disclosed herein, the temperature sensing elementsare shown and described as thermal diodes that are forward biased togenerate respective diode voltages that vary based on temperature. Thus,the sensing element 104 provides the voltage to an input of atemperature sensor 106.

Another temperature sensing element (e.g., thermal diode) 108 is part ofanother circuit (e.g., another IC die) 112. The sensing element 108 isconfigured to provide a voltage to a second temperature sensor 110indicative of an ambient temperature of the device 100 (e.g., thetemperature at a PN junction of the diode implemented in the circuit112). As an example, the sensing element 108 and temperature sensors 106and 110 are implemented in the same circuit 112, which may be a secondIC die that is separate from the IC die of circuit 101.

As an example, each of the temperature sensors 106 and 110 is configuredto provide a current signal indicative of the temperature of therespective circuit 101 and 112 based on the diode voltage. Eachtemperature sensor 106 and 110 can be configured using current modecircuitry such that the trim circuitry adjust the gain of the currentsignal propagating for the sensor and/or introduces a current offsetinto the current signal to compensate for the temperature coefficientmismatch. Thus, each temperature sensor 106 and 110 provides an outputcurrent signal indicative of the sensed temperature. As a result, adifference between the current values provides an indication of relativetemperature between the circuit 101 and the circuit 112 in which therespective sensing elements 104 and 108 are implemented.

Because each of the circuits 101 and 112, including temperature sensingelements 104 and 108, may be fabricated using different processes andprocess technologies, temperature coefficient mismatches may arise withrespect to the sensing elements (e.g., diodes) 104 and 108. Tocompensate for the mismatches in the temperature coefficients of sensingelements 104 and 108, the device 100 also includes trim circuitry 114.The trim circuitry 114 is configured to trim current in at least one orboth of the temperature sensors 106 and 110 to compensate for mismatchesbetween the temperature coefficients of the sensing elements 104 and108. As an example, the trim circuitry 114 includes a first trim circuitconfigured to apply gain and/or offset to the temperature sensor 106.Additionally or alternatively, the trim circuitry 114 includes a secondtrim circuit configured to apply gain and/or offset to the temperaturesensor 110.

The device 100 also includes a shutdown control circuit 116 configuredto control shutdown of the power switch device 102 based on a difference(e.g., representing relative temperature) between the current signalsfrom sensors 106 and 110 exceeding a threshold. Because the trimcircuitry 114 compensates for mismatches and temperature coefficientsbetween the sensing elements (e.g., diodes) 104 and 108, a consistentthreshold may be provided across a range of ambient temperatures andaffords accurate temperature sensing of the power switch device 102during fast high in-rush current conditions. As an example, the circuit112 can correspond to an IC die implementing a control system, such asto control the power switch device 102 (e.g., via control signal) inresponse to an input signal from a relay, switch or the like.

The example of FIG. 1 demonstrates a single power switch device 102 inan IC die. In other examples more than one switch device 102 may beimplemented in the device 100 along with a respective temperature sensorfor receiving the thermal voltage signal and providing respectivecurrent signals indicative of the sensed temperature. In this example,by implementing each of the temperature sensors 106 and 110 and anyadditional temperature sensors in a current mode technology, the device100 may be fabricated in an area efficient manner to provide amultichannel switching control system. For the example of an automotiveapplication, each such power switch device may be connected to control aload such as a light, fan, actuator or the like.

By way of example, the shutdown control 116 includes a comparator 118that determines a difference between the current signals fromtemperature sensors 106 and 110 relative to a threshold to ascertainwhether the temperature of the power switch device 102 exceeds thetemperature of the circuit 112 by an amount greater than the threshold.The shutdown control 116 thus is configured to trigger thermal shutdownof the power switch device 102 based on the comparison. In an example,the device 100 can be implemented in common IC packaging, demonstratedschematically at 120. As a further example, each power switch circuit101 and control circuit 112 is implemented as an IC die are packaged(e.g., as a multi-die module) within an encapsulant, such as an epoxy,epoxy blend, silicon, polyimide or another potting or encapsulationmaterial.

FIG. 2 depicts an example of a temperature sensing system 200 in whichthe circuitry is implemented in a multi-die module package device 202.In this example, the temperature sensing system 200 includes a thermaldiode D1 (e.g., corresponding to temperature sensing element 104)implemented on a first die 204. The die (e.g., a power FET die) 204 alsoincludes a power switch device, demonstrated as a MOSFET (also referredto herein as a FET) 206 (e.g., corresponding to the power switch device102). In this example, the FET 206 includes a gate terminal 208, asource terminal 210 and a drain terminal 212. The drain terminal 212 iscoupled to a battery terminal through a substrate resistancedemonstrated at RSUB. A battery (or other power supply—not shown), whichsupplies a supply voltage (VBB), may be implemented internal or externalto the package 202 to supply electrical power to the power FET die 204and/or a controller IC die 214. Control circuitry 215 in the IC die 214may provide a control signal to the gate 208 of the FET 206 to turn onthe FET to supply electrical power to a load (not shown) coupled to anoutput voltage terminal 217 of the device 202, which is coupled to thesource 210.

The term “couple” is used throughout the specification. The term maycover connections, communications, or signal paths that enable afunctional relationship consistent with the description of thisdisclosure. For example, if device A generates a signal to controldevice B to perform an action, in a first example device A is coupled todevice B, or in a second example device A is coupled to device B throughintervening component C if intervening component C does notsubstantially alter the functional relationship between device A anddevice B such that device B is controlled by device A via the controlsignal generated by device A.

In this example, the controller IC die 214 includes a first temperaturesensor 216 and a second temperature sensor 218 (e.g., corresponding totemperature sensors 106 and 110). The temperature sensor 216 isconnected to the diode D1 to receive the diode voltage that representsthe temperature of the IC die 204. For example, the die 214 includes acharge pump configured to a voltage to forward bias the diode D1 toprovide a diode voltage across that varies based on temperature of thePN junction of D1. In an example of FIG. 2 , the temperature sensor 216includes inputs 220 and 222 coupled to the anode and cathode of thediode D1, such that the diode voltage is provided in a differentialvoltage to respective inputs of the temperature sensor 216.

The temperature sensor 216 is configured to convert the sensed diodevoltage to a corresponding current signal (ISNS_Power_FET) thatrepresents the sensed temperature of the FET 206. As an example, thetemperature sensor 216 includes a level shifter 224 configured to shiftthe level of the diode voltage to a desired voltage level. For examplethe level shifter 224 can shift down the diode voltage to a level thatis below the battery voltage VBB. The level shifter 224 thus provides alevel shifted diode voltage to inputs of a voltage-to-current (V2I)converter 226. The converter 226 is configured to convert the levelshifted voltage to the corresponding current ISNS_Power_FET. Theconverter 226 is further configured to compensate for a temperaturecoefficient mismatch according to a trim gain and/or trim offset appliedto the temperature sensor 216. The trim gain and trim offset can beapplied by associated trim circuitry (not shown—but see, e.g., FIG. 3 ).The current from the temperature sensor 216, which has been adjustedbased on the trim gain and/or trim offset, is applied to a respectiveinput of a current comparator 228. The second temperature sensor 218applies another current signal demonstrated at ISNS_Control to the otherinput of the comparator 228.

For example, the second temperature sensor 218 is configured to providethe current signal ISNS_Control to the comparator 228 based on thevoltage across another temperature sensing element, demonstrated asdiode 222 (e.g., corresponding to temperature sensing element 108). Forexample, the diode 222 is implemented on the IC die 214 as part of thecontrol circuitry. Similar to the temperature sensor 216, a charge pumpis configured to apply a voltage to forward bias the diode to provide avoltage across the diode D2, which varies based on the temperature ofthe IC die 214. The diode voltage from D2 is applied to the input of thetemperature sensor 218. For example, a differential voltage across thediode D2 is provided as the diode voltage to an input of a level shifter230. The level shifter 230 is configured to shift the diode voltage(e.g., down) to a desired level below the battery voltage and producesthe level-shifted differential voltage to respective inputs of avoltage-to-current converter 232. The converter 232 is adjusted inresponse to a trim gain and/or trim offset to provide the correspondingcurrent signal ISNS_Control representing an ambient temperature of theIC die 214 (and the system 200 more generally). For example, the trimgain and/or trim offset are supplied by trim circuitry, as disclosedherein (see, e.g., FIG. 3 ).

For example, a threshold circuit 234 is configured to apply a threshold(e.g., a current signal) to the current provided by the sensor 218. Thethreshold may be fixed or be programmable. While in the example of FIG.2 , the threshold circuitry 234 applies the offset current to thecurrent provided by sensor 218, in an alternative example, the currentcould be applied to the current provided by the temperature sensor 216.By injecting current to one of the sensor signals in this way, thecomparison of the current signals by comparator 228 results in arelative temperature output signal (TREL_OUT) that can be utilized tocontrol thermal shutdown of the power switch device 206. For example, ifthe temperature of the IC die 204, as indicated by the current signalISNS_Power_FET from sensor 216, exceeds the temperature sensed by diodeD2 for the IC die 214 by an amount greater than the threshold, asindicated by the ISNS_Control signal, the comparator 228 provides acorresponding output (e.g., applied to the gate 208) to trigger shutdownof the power switch device 206. If the temperature of the IC die 204does not exceed the temperature of the ICI die 214 by the threshold, thecomparator 228 provides a low output, such that the power switch device206 can remain operating.

By implementing trim gain and offset with respect to the voltage toconverters 226 and 232, a finer degree of control and mismatchcompensation may be implemented in the device 202, which results in amore accurate relative temperature determination by the comparator 228.This further results in more accurate thermal shutdown control for thepower FET device 206 across a wide range of ambient temperatures.

FIG. 3 depicts an example of a sensor circuit 300, which may be utilizedto implement respective sensors 106, 110 of FIG. 1 or respective sensors216, 218 of FIG. 2 . The sensor circuit 300 includes a level shifter 302that includes one or more inputs adapted to be coupled to a temperaturesensing element. For example, the temperature sensing element is athermal diode 304 configured to provide a diode voltage based ontemperature of a circuit on which the diode 304 is implemented. Thediode 304 can reside on the same IC die as a power switch device (e.g.,IC 101 or 204) or may correspond to a diode implemented on another ICdie (e.g., die 112 or 214) such as corresponding to the controlcircuitry. Thus, in one example, each of the temperature sensors herein(FIGS. 1, 2 and 11 ) may be implemented according to the configurationof the sensor circuit 300 disclosed with respect to FIG. 3 .

In this way, the diode voltage may represent the temperature of the FETalso implemented on the same circuit with the diode. A charge pump canbe coupled to the anode to provide an excitation current to forward biasthe diode for supplying the diode voltage. A cathode of the diode 304can be connected to a battery voltage VBB, such as directly or through asubstrate resistance (e.g., RSUB of FIG. 2 ).

As an example, the level shifter 302 includes FET devices 306 and 308,each having its gate coupled as inputs to receive the diode voltage as adifferential voltage across the diode 304. The FET device 306 isconnected in series with a current source 310 between the batteryvoltage VBB and electrical ground. The transistor device 308 is alsoconnected in series with another current source 312 between VBB andelectrical ground. The level shifter 302 includes outputs coupled torespective inputs of a voltage-to-current converter circuitry 316. Thelevel shifter 302 thus is configured to provide level shifted voltagesV1 and V2 to respective inputs of the voltage-to-current converter 316.For example, the level shifter 302 can shift the diode voltage to alevel that is below the battery voltage VBB. The example of circuit 300of FIG. 3 demonstrates the diode voltage and the level-shifted outputvoltage being differential voltages, such as for a vertical FETstructure (e.g., where the FET structures are stacked vertically). Inother examples, the diode voltage may be a single input, such as in anon-vertical (e.g., horizontal) FET structure. In either case, the diodevoltage varies according to a temperature differential across the PNjunction of the diode 304.

The voltage-to-converter circuitry 316 includes a first converter 318configured to convert the voltage V1 into a corresponding current I1 anda second converter 320 configured to convert the voltage V2 into acorresponding current I2. The currents I1 and I2 represent adifferential current indicative of the temperature sensed by the diode304.

By way of example, the voltage V1 is provided to a non-inverting inputof amplifier 322 and an inverting input of amplifier 322 is coupled tothe battery voltage VBB through a resistor R1. The output of amplifier322 is connected to a gate of a FET 324, having its source connected toa diode connected FET 326 that is between the FET 324 and electricalground. The first converter 318 thus provides the current I1, which maybe represented as follows:I1=(VBB−V1)/R1.

The second converter 320 is configured to convert the voltage V2 to acorresponding current I2. For example, the voltage V2 is connected to anon-inverting input of an amplifier 330. An inverting input of anamplifier 330 is connected to VBB through a resistor R2. The output ofamplifier 330 is connected to the gate of an FET 332, which is coupledin series with a diode connected FET 334. By this configuration, thecurrent I2 can expressed as follows:I2=(VBB−V2)/R2.

A proportional to absolute temperature (PTAT) current generator circuit340 is coupled with the outputs of the voltage-to-current convertercircuitry 316. For example, the currents I1 and I2 are provided as inputsignals to the PTAT current generator 340 through respective FETsconfigured as current mirrors 342 to generate a corresponding differencecurrent demonstrated at (I2−I1).

The circuit 300 also includes trim circuitry that includes an offsettrim circuit 344 and a gain trim circuit 346. The offset trim circuit344 is configured to generate and provide an offset current to the PTATcurrent generator circuit 340 demonstrated as I3. As an example, theoffset trim circuit 344 is configured to provide the offset current I3based on an offset voltage VOFFSET (e.g., a DC voltage). The offsetvoltage may be set by connecting a resistance (e.g., trim resisters) orby setting input value to a digital-to-analog converter (DAC) to set theoffset voltage. The offset trim circuit 344 is configured to convert theoffset voltage to the current I3, which is applied to the PTAT circuit340 to adjust the level of the difference current (I2−I1). Because thedifferential current corresponds to the diode voltage (e.g.,representing temperature), the offset current thus adjusts thetemperature according to the applied offset.

As an example, the offset trim circuit 344 is configured as avoltage-to-current converter configured to convert the offset voltage tothe offset current I3. For example, the offset voltage is connectedbetween VBB and a non-inverting input of an amplifier 350. The invertinginput of amplifier 350 is connected to VBB through a resister R3. Anoutput of the amplifier is connected to the gate of an FET 352, which isconnected in series with a resister R3 and a diode connected transistor354 between VBB and electrical ground. As a result, the current I3 canbe expressed as follows:I3=(VBB−VOFFSET)/R3.

The offset current I3 is provided as an offset input to the PTAT currentgenerator circuit 340 through a current mirror network 356. In anexample, the current mirror 342 or 356 may be implemented within PTATgenerator circuit 340, in the voltage-to-current converter circuit 316or current mirror circuitry may be distributed between the convertercircuit 316 and the PTAT current generator circuit 340. The PTAT currentgenerator circuit 340 includes additional current combining circuitry358 (e.g., another current mirror network) configured to apply theoffset current I3 to the difference current (I2−I1) to provide anoffset-corrected current (I3−(I2−I1)).

Another current mirror 360 is configured to provide the offset-correctedcurrent (I3−(I2−I1)) to an input of the gain trim circuit 346. The gaintrim circuit 346 is configured to apply a gain to the offset correctedcurrent (I3−(I2−I1)) to produce a current sensor signal ISNSrepresenting the temperature detected by temperature sensing element,namely diode 304. For example, the sensor signal ISNS may correspond toISNS_Power_FET from sensor 216 or ISNS_Control from sensor 218.

By way of example, the gain trim circuitry 346 includes a FET 362 havingits gate connected through an output current mirror 360 to receive theoffset corrected current. The FET 362 is connected in series with aresister R4 between the battery voltage VBB and electrical ground. Thenode between R4 and FET 362 is connected to the non-inverting input ofan amplifier 364. The inverting input of amplifier 364 is connected toVBB through a resister R5. The amplifier thus is configured to amplifythe current offset corrected current signal based on the gainestablished by a ratio of the resistors R4 and R5. The output of theamplifier 364 is connected to the gate of an output FET 366 which inturn provides the sensor current signal ISNS based on the offsetcorrected current and to gain supply by the relationship betweenresistors R4 and R5. As an example, the output sensor current ISNS canbe equal to the following:R4/R5*(I3−(I2−I1)).

FIG. 4 includes a sequence of plots to demonstrate operation of thesensor circuit 300 in which voltage and current signals are demonstratedas a function of temperature at various stages of the circuit 300. In aplot 402 of voltage as a function of temperature, a diode voltage 404 isdemonstrated as decreasing linearly with respect to temperature. Abattery voltage 406 remains constant over temperature.

In response to the level shifter circuit 302 shifting the level of theinput voltage from the diode 304, level-shifted voltage signals areprovided, as demonstrated in the plot 410. As shown in plot 410, thelevel shifter provides voltages V1 and V2 at a level below the batteryvoltage VBB, which remains constant over temperature. As disclosed withrespect to FIG. 3 , voltages V1 and V2 are provided as input signals tothe voltage-to-current conversion circuitry 316. The voltage-to-currentconverter circuitry 316 is configured to convert the voltages V1 and V2to current signals shown in plot 412. As shown in plot 412,corresponding current signals I1 and I2 are provided and, through thecurrent mirror arrangement demonstrated n FIG. 3 , produce a differencecurrent (I2−I1), which is applied to the PTAT generator circuit 340along with an offset trim current (e.g., from offset trim circuit 344)to produce signals demonstrated in plot 414. For example, the PTATgenerator circuit 340 is configured to combine the offset current I3 andthe difference current I2−I1 to produce the offset-corrected currentI3−(I2−I1), such as shown in plot 414. The offset-corrected current issupplied as an input to the gain trim circuitry 346 to produce signalsdemonstrated in plot 416. For example, the gain circuitry 346 applies again factor (e.g., based on a ratio of resistors R4 and R5) to theoffset-corrected current 418 to produce the sensor signal ISNS, whichhas been both offset and gain corrected. As disclosed herein, the offsetand gain trim are applied to compensate for temperature coefficientmismatch between sensing elements (e.g., diodes) used in separatetemperature sensing circuits. For example, the offset trim is configuredto provide level (e.g., DC level) compensation and gain trim isconfigured to provide slope compensation of the currents.

As a further example, FIG. 5 demonstrates an example of some effects ofdiode mismatch that are to be compensated by trim circuitry (e.g.,offset trim and gain trim circuitry) disclosed herein. In FIG. 5 , plot502 demonstrates diode voltage as a function of temperature. Inparticular, a voltage curve 504 demonstrates diode voltage as a functionof temperature for a diode implemented on an IC die that includes apower FET device (e.g., 101 or 204). Another plot 506 demonstrates adiode implemented on a controller IC die (e.g., 112 or 214). Thedifferences between diode voltages over temperature shown at 502 and 504may result from semiconductor fabrication processing variation in thetechnologies used to produce respective diode structures (or othertemperature sensing elements) having different temperature coefficients.As shown in the plot 510, resulting currents without applying gain ortrim offsets are shown at 512 and 514. The current 512, for examplecorresponds to the current provided based on the diode voltage 504 andthe current 514 corresponds to the diode voltage 506. As shown in theplot of 510, without compensating for the difference in temperaturecoefficients demonstrated in plot 502, the threshold voltagesdemonstrated at TREL1 and TREL2 will vary over ambient temperature ofthe IC die on which the sensors are implemented for a same difference incurrent (e.g., for I_delta1=I_delta2). This difference is visualized asa difference in slope between plots 512 and 514. As disclosed herein,trim circuitry is configured to apply both offset and gain trim tocompensate for the difference in temperature coefficients between thediodes such that an accurate relative thermal shutdown can beimplemented with a consistent threshold across the ambient temperaturerange. For example, gain trim can adjust the slope of the current overtemperature and offset trim can adjust the level of current.

FIG. 6 illustrates an example of a multi-channel thermal shutdown system600.

The system 600 can be implemented in a multi-die module that includes aplurality of IC dies 602, 604, 606 and 608. As a multi-channelimplementation, there can be any number of two or more IC dies 602, 604and 606 that each includes a respective power switch device 610, 612,and 614. Each power switch device 610, 612, and 614 can be a power FETthat is controlled (e.g., by circuitry on controller die 608) to supplyoutput power to load (not shown) via a corresponding output 616, 618 and620. Three such power switch IC dies are demonstrated in the example ofFIG. 6 . However, a greater or lesser number of power switch IC dies maybe used in other examples. A supply voltage VBB can supply a DC voltageto a corresponding input of each of the IC die circuits 602, 604 and606, as shown.

Each of the IC die circuits 602, 604, 606 also includes a respectivetemperature sensing element, demonstrated as a respective thermal diodeD1, D2 and D3. Corresponding inputs of the controller die includes arecoupled to respective terminals across each diode to supply the diodevoltages to respective inputs of temperature sensor circuits 622, 624and 626. As disclosed herein, each respective diode voltage varies as afunction of temperature of the respective IC die 602, 604 and 606 andthus represents temperature of the respective power switch device 610,612 and 614. Each temperature sensor 622, 624 and 626 can be implementedaccording to the example sensors disclosed herein (e.g., sensors 106,216 or 300).

By way example, each temperature sensor 622, 624 and 626 is configuredto convert its sensed diode voltage to a corresponding current signalthat represents the sensed temperature of the respective FET 610, 612and 614. Each temperature sensor 622, 624 and 626 may include a levelshifter a voltage-to-current converter to convert the diode voltage tothe corresponding sensed current signal. As disclosed herein, eachtemperature sensor 622, 624 and 626 further configured to compensate fora temperature coefficient mismatch according to a trim gain and/or trimoffset applied to the respective temperature sensor. Each temperaturesensor 622, 624 and 626 provides a respective current signal, which hasbeen adjusted based on the trim gain and/or trim offset, to an input ofa respective current comparator 630, 632 and 634.

The controller die 608 includes a temperature sensing element, shown asa diode DA, configured to provide a diode voltage to a secondtemperature sensor 636 (e.g., corresponding to sensor 106, 218 or 300).The diode voltage represents an ambient temperature associated with thecontroller die. The second temperature sensor 636 is configured toconvert the diode voltage to a corresponding current signal that issupplied to a second input of each respective current comparator 630,632 and 634. The temperature sensor 636 is further configured tocompensate for a temperature coefficient mismatch according to a trimgain and/or trim offset that is applied.

A threshold circuit 640 is configured to apply a threshold (e.g., acurrent signal) to the current provided by the sensor 636. For example,threshold circuit 640 is configured (e.g., as a current DAC) to providea multi-channel current threshold that is set for each currentcomparator 630, 632 and 634 according to the specifications of eachrespective power switch device 610, 612 and 614. In this way, eachcomparator is configured to provide a relative temperature output signalfor each respective channel (TREL_OUT_CH1, TREL_OUT_CH2 TREL_OUT_CH3)that can be utilized to control thermal shutdown of the channel'srespective power switch device 610, 612 and 614. For example, if thetemperature of IC die 604, as indicated by the current sensor signalfrom sensor 624, exceeds the temperature sensed by diode DA for the ICdie 608 by an amount greater than its respective threshold, thecomparator 632 provides a high output to trigger shutdown of the powerswitch device 612. If the temperature of the IC die 604 does not exceedthe temperature of the ICI die 608 by the threshold, the comparator 632provides a low output, such that the power switch device 604 may remainturned on. The system 600 operates similarly to monitor temperature andcontrol thermal shutdown for each respective FET channel. Thiscurrent-mode structure utilized in temperature sensor circuits 622, 624,626 and 636 helps extend temperature sensing to multi-channel devices,as shown in the example of FIG. 6 . For example, by adding a front-endvoltage-to-current conversion circuit (as in sensor circuits 622, 624,626 and 300) for each additional power FET device, the relative thermalshutdown system can be expanded without much of an increase in die area.

In view of the foregoing structural and functional features, the exampleembodiments disclosed herein, provide clamp circuitry to protect powerswitch devices across a variety of transient electrical disturbances andoperating conditions. Example embodiments implement thermal handling tooperate power switch devices within SOA limits of power switch. Asdescribed herein, the circuits and devices (see, e.g., FIGS. 1-3 and 6 )provide a low-cost solution that can reduce the area for temperaturesensor circuitry utilized to limit the energy accumulation, such asduring high in-rush condition. In contrast, existing approaches usedvoltage differential amplifier to generate PTAT current, which tend touse a greater on-chip area. For example, the current current-modestructure disclosed herein may be implemented with a fewer number ofdevices compared to the voltage-mode structure used in existingapproaches. Additionally, because there are fewer devices connected inseries from the supply voltage to ground, the circuit has more operationrange under low supply voltage conditions as well as affords improvedbandwidth for sensing temperature of power switch devices during fasthigh in-rush current conditions.

What have been described above are examples. It is, of course, notpossible to describe every conceivable combination of components ormethodologies, but one of ordinary skill in the art will recognize thatmany further combinations and permutations are possible. Accordingly,the disclosure is intended to embrace all such alterations,modifications, and variations that fall within the scope of thisapplication, including the appended claims. In this description, theterm “based on” means based at least in part on. As used herein, theterm “includes” means includes but not limited to, the term “including”means including but not limited to. Additionally, where the disclosureor claims recite “a,” “an,” “a first,” or “another” element, or theequivalent thereof, it should be interpreted to include one or more thanone such element, neither requiring nor excluding two or more suchelements.

What is claimed is:
 1. A circuit comprising: a level shifter includingan input adapted to be coupled to a diode and including a level shifteroutput; a voltage-to-current converter including an input coupled to thelevel shifter output and a sensor current output; an offset trim circuitincluding an offset current output; a proportional to absolutetemperature (PTAT) current generator including a first PTAT inputcoupled to the sensor current output and a second PTAT input coupled tothe offset current output, the PTAT current generator also including aPTAT output; and a gain trim circuit including an input coupled to thePTAT output and including a sensor output.
 2. The circuit of claim 1,further comprising the diode, the diode configured to provide a diodevoltage to the input of the level shifter that varies based on atemperature of a substrate of the diode, the level shifter configured toprovide a level shifted voltage at the level shifter output based onshifting the diode voltage.
 3. The circuit of claim 2, wherein thevoltage-to-current converter further comprises an amplifier having afirst input coupled to the level shifted voltage and a second inputcoupled to a battery voltage through a resistance, the amplifier havingan output coupled to a control input of a switch device, the switchdevice being connected in series with the resistance and configured toprovide corresponding current at the sensor current output based on thediode voltage, the battery voltage and the resistance.
 4. The circuit ofclaim 2, wherein the level shifter is configured to provide a levelshifted voltage as a differential voltage, corresponding to first andsecond voltages, at respective level shifter outputs based on the diodevoltage, a charge pump voltage and a battery voltage, wherein thevoltage-to-current converter further comprises: a firstvoltage-to-current conversion circuit configured to convert the firstvoltage to a first current signal based on the battery voltage and afirst resistor; and a second voltage-to-current conversion circuitconfigured to convert the second voltage to a second current signalbased on the battery voltage and a second resistor.
 5. The circuit ofclaim 4, wherein the offset trim circuit is configured to provide anoffset current based on an offset voltage, and wherein the PTAT currentgenerator is configured to generate a PTAT current at the PTAT outputbased on the first current signal, the second current signal and theoffset current.
 6. The circuit of claim 2, wherein the diode is a firstdiode, the level shifter is a first level shifter, thevoltage-to-current converter is a first voltage-to-current converter,the offset trim circuit is a first offset trim circuit, the PTAT currentgenerator is a first PTAT current generator, and the gain trim circuitis a first gain trim circuit, further comprising: a first temperaturesensor that includes the first level shifter, the firstvoltage-to-current converter, the first offset trim circuit, the firstPTAT current generator, and the first gain trim circuit, the firsttemperature sensor configured to convert a first diode voltage from thefirst diode to a first current signal; and a second circuit comprising:a second diode configured to provide a second diode voltage that variesbased on a temperature of a substrate of the second diode; a secondlevel shifter including an input coupled to the second diode andincluding a second level shifter output; a second voltage-to-currentconverter including an input coupled to the second level shifter outputand a second current output; a second offset trim circuit including asecond offset current output; a second PTAT current generator includinga second PTAT input coupled to the second current output and a secondPTAT input coupled to the offset current output, the second PTAT currentgenerator also including a second PTAT output configured to provide arespective PTAT current; and a second gain trim circuit including aninput coupled to the second PTAT output and including a second sensoroutput.
 7. The circuit of claim 6, wherein the substrate of the firstdiode comprises a first die that includes the first diode and a powerswitch device and wherein the substrate of the second diode comprises asecond die, further comprising: a temperature comparator coupled to thefirst and second sensor outputs, the temperature comparator configuredto compare a difference between current signals at the first and secondsensor outputs relative to a threshold to control shutdown of the powerswitch device.
 8. The circuit of claim 7, wherein the first die and thesecond die reside in a common packaging of a multi-die module.
 9. Asensor circuit having a sensor input adapted to be coupled to atemperature sensor, the sensor circuit comprising: a level shifterincluding an input coupled to the sensor input and including a levelshifter output; a voltage-to-current (V2I) converter including a V2Iinput coupled to the level shifter output and including a sensor currentoutput, the V2I converter operable to generate a first currentresponsive to a first sensor voltage and to generate a second currentresponsive to a second sensor voltage; an offset trim circuit includingan offset current output, the offset trim circuit operable to generatean offset current; a proportional to absolute temperature (PTAT) currentgenerator including a first PTAT input coupled to the sensor currentoutput and a second PTAT input coupled to the offset current output, thePTAT current generator also including a PTAT output, the PTAT currentgenerator operable to generate a third current based on the firstcurrent, the second current and the offset current; and a gain trimcircuit including an input coupled to the PTAT output and including asensor output.
 10. The sensor circuit of claim 9, wherein the gain trimcircuit is operable to apply a gain to the third current.
 11. The sensorcircuit of claim 9, wherein the level shifter includes a firsttransistor operable to generate the first sensor voltage and includes asecond transistor operable to generate the second sensor voltage. 12.The sensor circuit of claim 11, wherein the temperature ensor includes athermal diode having a cathode and an anode.
 13. The sensor circuit ofclaim 12, wherein the anode is coupled to a control terminal of thefirst transistor and the cathode is coupled to a control terminal of thesecond transistor.